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Kinetic Modeling Of Dopant And Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach

Published online by Cambridge University Press:  11 February 2011

Craig B. Arnold  and
Michael J. Aziz
Craig B. Arnold
Affiliation:
Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
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Abstract

We propose a new kinetic model for surface segregation during vapor phase growth that accounts for multiple segregation mechanisms, including mechanisms for terrace mediated exchange and step edge mediated exchange. The major result of the model is an analytic expression for the experimentally measured segregation length and profile broadening that can be readily calculated without the need for numerical simulations. We compare the model to experimental measurements for the temperature dependence of segregation of Sb in Si(001). The model is able to accurately describe both the anomalous segregation at low temperature and the transition between equilibrium and kinetically limited segregation at high temperature. An excellent agreement is obtained using realistic energies and pre-exponential factors for the kinetic rate constants. The model can be applied to other segregating systems in planar geometries, including metallic and III-V semiconducting thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W14.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Schubert, E., Delta-Doping of Semiconductors (Cambridge University Press, Cambridge, 1996), p. 604.Google Scholar
2. Semiconductor Lasers II: Materials and Structures, edited by Kapon, E. (Academic Press, San Diego, CA, 1999).Google Scholar
3. Allen, P. B., Solid State Comm. 102, 127 (1997).Google Scholar
4. Farrow, R. F. C., IBM J. of Res. and Dev. 42, 43 (1998).Google Scholar
5. Gossmann, H. J. and Schubert, E. F., Critical Reviews in Solid State and Materials Sciences 18, 1 (1993).Google Scholar
6. Gossmann, H. J., Schubert, E. F., Eaglesham, D. J., and Cerullo, M., Applied Physics Letters 57, 2440 (1990).Google Scholar
7. Aziz, M. J., J. Appl. Phys. 53, 1158 (1982).Google Scholar
8. Harris, J. J. et al., Appl. Phys. A 33, 87 (1984), predates Jorke.Google Scholar
9. Jorke, H., Surf. Sci. 193, 569 (1988).Google Scholar
10. Tsao, J., Materials Fundamentals of Molecular Beam Epitaxy (Academic Press, Boston, 1993), pp. 275–283.Google Scholar
11. Jesson, D. E., Pennycook, S. J., Baribeau, J. M., and Houghton, D. C., Phys. Rev. Lett. 68, 2062 (1992).Google Scholar
12. Nutzel, J. and Abstreiter, G., Phys. Rev. B 53, 13551 (1996).Google Scholar
13. Goldman, L. M. and Aziz, M. J., J. Mater. Res. 2, 524 (1987).Google Scholar
14. Jiang, Z. M. et al., Thin Solid Films 336, 236 (1998).Google Scholar
15. Jorke, H., Herzog, H. J., and Kibbel, H., Fresenius J. Anal. Chem. 341, 176 (1991).Google Scholar