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Kinetic Modeling and Measurement of Active Species Distributions During Dry Etching

Published online by Cambridge University Press:  28 February 2011

K. S. Uhm ,
M. R. Kump ,
J. P. Mcvittie  and
R. W. Dutton
K. S. Uhm
Affiliation:
Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA 94305
M. R. Kump
Affiliation:
Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA 94305
J. P. Mcvittie
Affiliation:
Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA 94305
R. W. Dutton
Affiliation:
Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA 94305
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Abstract

A simple kinetic dry etching model accounting for generation, loss, and transport of the reactive and by-product species is developed.To demonstrate and evaluate the model, the etching of silicon using SF6+O2+Ar in the plasma etch mode is investigated.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 237
Copyright
Copyright © Materials Research Society 1986

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References

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