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A Kinetic Model for Metalorganic Chemical Vapor Deposition of GaAs from Trimethylgallium and Arsine

Published online by Cambridge University Press:  25 February 2011

Triantafillos J. Mountziaris  and
Klavs F. Jensen
Triantafillos J. Mountziaris
Affiliation:
Department of Chemical Engineering and Materials Science University of Minnesota, Minneapolis, MN 55455
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering and Materials Science University of Minnesota, Minneapolis, MN 55455
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Abstract

A kinetic model for metalorganic chemical vapor deposition (MOCVD) of GaAs from trimethylgallium and arsine is presented. The proposed mechanism includes 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 29 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Sensitivity analysis and existing experimental observations have been used to develop the reduced mechanism from the large number of reactions that might in principle occur. Rate constants are estimated by using thermochemical methods and reported experimental data. The kinetic mechanism is combined with a two-dimensional transport model of a hot-wall tubular reactor used in experimental studies. Model predictions of gas-phase composition and GaAs growth rates show good agreement with published experimental studies. In addition, the model predicts reported trends in carbon incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 117
Copyright
Copyright © Materials Research Society 1989

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References

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