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Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer Films

Published online by Cambridge University Press:  21 February 2011

E. Ma
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139 IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
L.A. Clevenger
Affiliation:
IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
C.V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
K.N. Tu
Affiliation:
IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The growth of an amorphous Ti-Si phase and subsequent formation of crystalline silicides during solid-state reactions in Ti/a-Si multilayer films have been studied using power-compensated differential scanning calorimetry, cross-sectional transmission electron microscopy, and thin-film x-ray diffraction. By analyzing calorimetric data we have determined the activation energies for the formation of the various silicides (amorphous Ti-silicide, TiSi, C49-TiSi2, Ti5Si3) as well as their heats of formation. An amorphous silicide is the first phase to form during heating and we have measured the composition profile of this amorphous layer using scanning transimission electron microscopy. Metastable phase equilibria in the Ti-Si system are discussed in light of the thermodynamic and compositional information obtained in our experiments.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Thompson, C.V., Clevenger, L.A., DeAvillez, R.R., Ma, E. and 1H. Miura, these proceedings.Google Scholar
2. Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 1219 (1989);J.Y. Yang and L.J. Chen, Appl. Phys. Lett. 56,457 (1990).Google Scholar
3. Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
4. I..Raaijmakers, J.M.M., Reader, A.H. and Oosting, P. H., J. Appl. Phys. 63, 2790 (1988).Google Scholar
5. Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).Google Scholar
6. Nathan, M., J. Appl. Phys. 63, 5534 (1988).Google Scholar
7. Kissinger, H.E., Analyt. Chem. 29, 1702 (1957).Google Scholar
8. Hung, L.S., Gyulai, J., Mayer, J.W., Lau, S.S. and Nicolet, M-A., J. Appl. Phys. 54, 5076 (1983).Google Scholar
9. Murarka, S.P., Silicides for VLSI Applications, (Academic, NY 1983), p. 73.Google Scholar
10. Donavan, E., Spaepen, F., Tumbull, D., Poate, J. and Jacobson, D., J. Appl. Phys. 57, 1795 (1985).Google Scholar
11. Wong, G.C., Johnson, W.L. and Cotts, E.J., J. Mater. Res. 5, 488 (1990).Google Scholar
12. Schwartz, R.B., Nash, P. and Turnbull, D., J. Mater. Res. 2, 456 (1987).Google Scholar
13. Kaufman, L., CALPHAD 3, 45 (1979).Google Scholar
14. Clemens, B. and Sinclair, R., MRS Bulletin 15, 19 (1990).Google Scholar