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Is Thermalization Due to Electronic Self-Trapplng?
Published online by Cambridge University Press: 15 February 2011
Abstract
The interpretation that the red shift of the a-Si:H photoluminescence spectrum is due to carrier hopping is incompatible with Monte-Carlo simulations. We suggest that thermalization is instead the result of slow, gradual, electronic self-trapping. We show how this model reconciles the narrowness of the photoluminescence lifetime distribution with the observed red-shift of the energy spectrum.
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- Copyright © Materials Research Society 1995