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Irradiation Effects of Methanol Cluster Ion Beams on Solid Surfaces

Published online by Cambridge University Press:  01 February 2011

Gikan Takaoka ,
Masakazu Kawashita  and
Takeshi Okada
Gikan Takaoka
Affiliation:
[email protected], Kyoto University, Ion Beam Engineering Experimental Laboratory, Nishikyo-ku, Kyoto, 615-8510, Japan, +81-75-383-2329, +81-75-383-2343
Masakazu Kawashita
Affiliation:
[email protected], Kyoto University, Ion Beam Engineering Experimental Laboratory, Nishikyo-ku, Kyoto, 615-8510, Japan
Takeshi Okada
Affiliation:
[email protected], Kyoto University, Ion Beam Engineering Experimental Laboratory, Nishikyo-ku, Kyoto, 615-8510, Japan
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Abstract

In order to investigate the interactions of methanol cluster ion beams with solid surfaces, Si substrates and SiO2 films were irradiated at different acceleration voltages. The sputtered depth increased with increase of the acceleration voltage. When the acceleration voltage was 9 kV, the sputtered depths of Si and SiO2 at a dose of 1×1016ions/cm2 were 1497.1 nm and 147.8 nm, respectively. The selectivity between Si and SiO2 surfaces arose from the volatility of the reaction products. Furthermore, the sputtering yield for the Si surface was approximately seven hundreds times larger than that by Ar monomer ion beams. This suggested that chemical sputtering was predominant for the methanol cluster ion irradiation. In addition, the etching and cleaning process by the methanol cluster ion irradiation was performed on the Si surfaces contaminated with a small amount of metal particles such as Au and Al. Thus, methanol cluster ion beams have unique characteristics such as surface etching and cleaning with high sputtering yield and smooth surface.

Keywords

ion-solid interactionsSisurface reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG07-07
Copyright
Copyright © Materials Research Society 2007

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