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Ir Thin Films for PZT Capacitors Prepared by MOCVD Using a New Ir Precursor

Published online by Cambridge University Press:  01 February 2011

H. Fujisawa ,
S. Watari ,
M. Shimizu ,
H. Niu  and
N. Oshima
H. Fujisawa
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
S. Watari
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
M. Shimizu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
H. Niu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
N. Oshima
Affiliation:
Tokyo Research Center, TOSOH Corporation, 2743–1, Hyakawa, Ayase, Kanagawa 252–1123, Japan
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Abstract

Preparation of Ir thin films for PZT capacitors by MOCVD using a new liquid Ir precursor, Ir(EtCp)(CHD) was investigated. Ir thin films with a highly reflecting surface and (111)-orientation were successfully obtained at 230–400 C. When Ir(EtCp)(CHD) was used, shorter incubation time (20min at 230°C and not observed above 240°C) and higher nucleation density (300–400mm-2 at 250–300°C) were observed because of its lower decomposition temperature (300°C) than that of previously reported liquid precursor, Ir(EtCp)(COD). Resistivity of 100nm-thick Ir films grown at 250–350°C were less than 20μΩ·cm. PZT capacitors with top and bottom electrodes prepared using Ir(EtCp)(CHD) showed D-E hysteresis loop with Pr of 15μC/cm and Ec of 60kV/cm. No degradation of switching up to 10 switching cycles by bipolar pulses of ±231kV/cm (±3V) and 500kHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.37
Copyright
Copyright © Materials Research Society 2004

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References

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