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Ion-Beam-Modified Interfacial Growth of Tungsten Disilicide

Published online by Cambridge University Press:  26 February 2011

E. Ma ,
N. S. Alvi ,
A. H. Hamdi  and
M-A. Nicolet
E. Ma
Affiliation:
California Institute of Technology, Pasadena, CA 91125
N. S. Alvi
Affiliation:
Delco Electronics Corporation, 700 East Firmin Street, Kokomo IN 46902
A. H. Hamdi
Affiliation:
Electronics Department, General Motors Research Laboratories, Warren, MI 48090-9055
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Preimplantation of phosphorous is used in this work to promote the lateral uniformity of the interfacial WSi2 layer that grows upon subsequent thermal annealing of a thin W film sputter-deposited on a monocrystalline Si substrate. A phosphorous dose of 7.5x1015 P/cm2 yields an intermixed layer at the interface and the formation of the low-temperature hexagonal WSi2 phase. Subseqent vacuum furnace annealing at temperatures from 630°C to 715°C leads to a laterally uniform growth of tetragonal WSi2. The kinetics concur with those of previous reports for diffusion-limited growth of WSi2. All the available data fit well with a common growth law of x2 =kt, in which x is the thickness of the silicide layer, t is the annealing duration and k is the growth constant. The growth constant is given by k=1.5x104(cm2/s)exp(Ea/kBT), where the activation energy Ea=3.5±0.3 eV. Possible factors responsible for the beneficial effect of ion mixing on the interfacial silicide growth is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 579
Copyright
Copyright © Materials Research Society 1988

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References

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