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Ion-Beam-Induced Silicide Formation in Nickel Thin Films on Silicon

Published online by Cambridge University Press:  15 February 2011

L. J. Chen  and
C. Y. Hou
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, (Taiwan)
C. Y. Hou
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, (Taiwan)
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Abstract

As+-ion-induced silicide formation in nickel thin films on silicon was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The emphasis was on the study of ion-beam-induced microstructural changes.

For 160 keV As+ implantation, amorphization of the interface occurred at a dose of 5 × 1014 cm−2. Ni2Si was found together with an amorphous layer after a 1 × 1015 cm−2 bombardment. For Ni/Si(100) the surface layer became completely amorphous after implantation to 5×1015 cm−2. Silicides were found after a 1×1016 cm−2 irradiation. The amorphous layer was not stable enough to withstand the enormous chemical driving force causing the formation of crystalline silicides as the composition ratio Nsi/NNi reached a critical value. A similar trend for ion-beam-induced reactions was found for 190 keV As+ implantation on Ni/Si(111) as for 160 keV implantation.

The results of post-implantation annealing showed major differences from those obtained for directly annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 167
Copyright
Copyright © Materials Research Society 1982

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References

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