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Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of Sigec on Si Formed by Ge and C Ion Implantation and their Structural and Optical Properties

Published online by Cambridge University Press:  21 February 2011

N. Kobayashi ,
H. Katsumata ,
Y. Makita ,
M. Hasegawa ,
N. Hayashi ,
H. Shibata ,
S. Uekusa  and
S. Hishita
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
H. Katsumata
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama, Kawasaki, Kanagawa 214, Japan
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
M. Hasegawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
N. Hayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
H. Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
S. Uekusa
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama, Kawasaki, Kanagawa 214, Japan
S. Hishita
Affiliation:
National institute for Research in inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305 Japan
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Abstract

Epitaxial layers of Si1-x-yGexCy on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400keV Ge and ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS-channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si1-x-yGexCy/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si1-x-yGexCy/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I1 peak with/without I1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. these optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 189
Copyright
Copyright © Materials Research Society 1995

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