Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T01:54:12.530Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-Beam Mixing and Amorphization in Au/Zr Bilayers*

Published online by Cambridge University Press:  26 February 2011

Fu-Rong Ding ,
P. R. Okamoto  and
L. E. Rehn
Fu-Rong Ding
Affiliation:
Permanent Address: Department of Technical Physics, Peking University, Beijing, China
P. R. Okamoto
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
L. E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Get access

Abstract

Au/Zr bilayer films with inert-gas markers were produced by low energy (< 4 keV) implantation. Mass transport was measured during ion-beam mixing with 1 MeV Kr at several temperatures between 330 and 540K. Two distinct regimes of apparent Arrhenius behavior were found with activation enthalpies of 0.06 and 0.9 eV in the temperature range 330–440K and 460–540K, respectively. Microstructural changes during ion-beam mixing were studied in situ, in a high voltage electron microscope. Heterogeneous nucleation of an amorphous phase was observed during mixing. The results are compared with similar studies reported previously in Ni/Zr bilayer specimens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 69
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Work supported by the U. S. Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.

References

REFERENCES

1. Ding, Fu-Rong, Averback, R. S. and Hahn, H., to be published.Google Scholar
2. Cheng, Y.-T., Johnson, W. L. and Nicolet, M.-A., Appl. Phys. Lett. 47 (8), 800 (1985).CrossRefGoogle Scholar
3. Hahn, H., Averback, R. S. and Rothman, S. J., Phys. Rev. B 33, 8825 (1986).Google Scholar
4. Matteson, S. and Nicolet, M.-A., “Ion Mixing”, Ann. Rev. Mat. Sci. 13, 339 (1983).CrossRefGoogle Scholar
5. Chu, W. K., Lau, S. S., Mayer, J. W., Muller, H. and Tu, K. N., Thin Solid Films, 25, 393 (1975)Google Scholar
6. Chu, W. K., Krautle, H., Mayer, J. W., Muller, H., Nicolet, M.-A. and Tu, K. N., Appl. Phys. Lett. 25, 454 (1974).Google Scholar
7. Program developed by Schalit, M., Averback, R. S. and Thompson, L. J..Google Scholar
8. Fedorov, G. B. and Smirnov, E. A., Diffusion in Reactor Materials, (Atomizdat Publishers, Moscow, 1978), p. 28.Google Scholar
9. Wang, Zhong-Lie, Nucl'. Instr. & Methods in Physics Research, B2, 784 (1984).Google Scholar
10. Mayer, J. W., Tsaus, B. Y., Lau, S. S. and Hung, L. S., Nucl. Instr. & Methods, 182/183, 1 (1981).Google Scholar
11. Averback, R. S., Nucl. Instr. & Methods in Physics Research, B15, 675 (1986).Google Scholar
12. Sizmann, Rudolf, Journal of Nuclear Materials, 69 & 70, 386 (1968).Google Scholar
13. Ziegler, J. F., IBM-Research, Yorktown, New York, 10598, USA.Google Scholar
14. Nakajima, H., Koiwa, M., Minomish, Y. and ono, S., Trans. Japan Inst. of Metals, 24, 655 (1983).Google Scholar
15. Hahn, H., Averback, R. S., Ding, Fu-Rong, Loxton, C. and Baker, J., Materials Science Forum Volumes, 15–18, (1987), pp. 511–516.Google Scholar
16. Cheng, Y-T., Rossum, M. Van, Ncolet, M-A, and Johnson, W. L., Appl. Phys. Lett. 45 (2), 185 (1984).CrossRefGoogle Scholar