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Ion-Beam Induced Epitaxial Crystallization of GexSi1–x/Si Heterostructures

Published online by Cambridge University Press:  25 February 2011

R.G. Elliman ,
M.C. Ridgway  and
J.S. Williams.
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Victoria, Australia.
M.C. Ridgway
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Victoria, Australia.
J.S. Williams.
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Victoria, Australia.
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Abstract

Amorphous GexSi1–x layers are shown to crystallize epitaxially from an underlying (100) oriented Si substrate when irradiated with 1.5 MeV Ne ions at temperatures as a low as 275°C. For a given Ne fluence, the extent of crystallization is shown to increase with increasing Ge content, consistent with the increased defect production rate in these alloys. It has also been demonstrated that strained layer configurations can be grown by ion-beam annealing and that such layers exhibit a commensurate to incommensurate transformation within the same composition range as layers grown by molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 105
Copyright
Copyright © Materials Research Society 1990

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References

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