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Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

L. He  and
W. A. Anderson
L. He
Affiliation:
State University of New Yorkat Buffalo, Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217 Bonner Hall, Amherst, NY 14260, USA
W. A. Anderson
Affiliation:
State University of New Yorkat Buffalo, Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217 Bonner Hall, Amherst, NY 14260, USA
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Abstract

Fluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at lOOkeV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 183
Copyright
Copyright © Materials Research Society 1993

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References

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