Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-24T03:07:37.521Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth

Published online by Cambridge University Press:  31 January 2011

Jason L. Johnson ,
Yongho Choi  and
Ant Ural
Jason L. Johnson
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
Yongho Choi
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
Ant Ural
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
Get access

Abstract

We experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate silicon oxide nanowires. We study the effect of implantation dose and energy, growth temperature, and H2 gas flow on the SiOx nanowire growth. We find that sufficiently high implant dose, high growth temperature, and the presence of H2 gas flow are crucial parameters for silicon oxide nanowire growth. We also demonstrate the patterned growth of silicon oxide nanowires in localized areas by lithographic patterning and etching of the implanted SiO2 substrates before growth. This works opens up the possibility of growing silicon oxide nanowires directly from solid substrates, controlling the location of nanowires at the submicron scale, and integrating them into nonplanar three-dimensional nanoscale device structures.

Keywords

nucleation & growthion-implantationchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD07-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wang C, Y, Chan L, H, Xiao D, Q, Lin T, C and Shih H, C 2006 J. Vac. Sci. Technol. B 24 613 Google Scholar
2 Yu D, P, Hang Q, L, Ding, Y, Zhang H, Z, Bai Z, G, Wang J, J, Zou Y, H, Qian, W, Xiong G, C and Feng S, Q 1998 Appl. Phys. Lett. 73 3076 Google Scholar
3 Sood D, K, Sekhar P, K and Bhansali, S 2006 Appl. Phys. Lett. 88 143110 Google Scholar
4 Liang C, H, Zhang L, D, Meng G, W, Wang Y, W and Chu Z, Q 2000 J. Non-Cryst. Solids 277 63 Google Scholar
5 Pan Z, W, Dai, S, Beach D, B and Lowndes D, H 2003 Nano Lett. 3 1279 Google Scholar
6 Wagner R, S and Ellis W, C 1964 Appl. Phys. Lett. 4 89 Google Scholar
7 Park H, K, Yang, B, Kim S, W, Kim G, H, Youn D, H, Kim S, H and Maeng S, L 2007 Physica E 37 158 Google Scholar
8 Adhikari A, R, Huang M, B, Wu, D, Dovidenko, K, Wei B, Q, Vajtai, R and Ajayan P, M 2005 Appl. Phys. Lett. 86 053104 Google Scholar
9 Mao J, M, Sun L, F, Qian L, X, Pan Z, W, Chang B, H, Zhou W, Y, Wang, G and Xie S, S 1998 Appl. Phys. Lett. 72 3297 Google Scholar
10 Ding X, Z, Huang, L, Zeng X, T, Lau S, P, Tay B, K, Cheung W, Y and Wong S, P 2004 Carbon 42 3030 Google Scholar
11 Choi Y, H, Sippel-Oakley, J and Ural, A 2006 Appl. Phys. Lett. 89 153130 Google Scholar
12 Stelzner, T, Andra, G, Wendler, E, Wesch, W, Scholz, R, Gosele, U and Christiansen, S 2006 Nanotechnology 17 2895 Google Scholar
13 Christiansen, S, Schneider, R, Scholz, R, Gosele, U, Stelzner, T, Andra, G, Wendler, E and Wesch, W 2006 J. Appl. Phys. 100 084323 Google Scholar
14 Johnson J, L, Choi, Y and Ural, A 2008 J. Vac. Sci. Technol. B 26 1841 Google Scholar
15 Choi, Y, Johnson J, L, and Ural, A 2009 Nanotechnology 20 135307 Google Scholar
16 Ziegler J, F and Biersack J, P computer code SRIM (www.srim.org).Google Scholar