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Ion Implantation to Inhibit Corrosion of Copper

Published online by Cambridge University Press:  25 February 2011

P. J. Dmg ,
W. A. Lanford ,
S. Hymes  and
S. P. Murarka
P. J. Dmg
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY12180
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Abstract

Ion implantation of boron and aluminium is used to passivate copper surfaces. Such a process modifies the copper only near its surface without affecting copper's desirable bulk properties. The present experiments show that implant doses as low as 1015 ions/cm2 of either boron or aluminium can reduce the oxidization rate by one order of magnitude or more compared to non-implanted samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 757
Copyright
Copyright © Materials Research Society 1992

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References

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