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Ion Implantation into Nb/NbO/PbAuIn Josephson Tunnel Junctions

Published online by Cambridge University Press:  25 February 2011

G. J. Clark  and
S. I. Raider
G. J. Clark
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
S. I. Raider
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Boron ions were implanted into completed planar and edge Nb/Nb oxide/PbAuIn Josephson tunnel junctions to directly trim the Josephson pair currents, Io. The implantation caused an increase in Io and in the junction subgap conductance and a decrease in the junction energy gap. For a fixed junction fabrication procedure, the variations were observed to be monotonic with 11B implant dose. Optimum trimming was found when the 11B ions were implanted such that the peak in the depth distribution occurred at the tunnel barrier. The implantation caused an increase in Io and in the junction subgap conductance and a decrease in the junction energy gap. The implanted junctions are stable at 80°C and under storage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 577
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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