Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:30:49.510Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Implantation Induced Effects at Polysdlicon Gate Feature Edges

Published online by Cambridge University Press:  25 February 2011

M. G. Stinson ,
P. L. Smith  and
C. M. Osburn
M. G. Stinson
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709 Dept. of Electrical and Computer Engineering North Carolina State University, Raleigh, North Carolina 27695–7911
P. L. Smith
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709
C. M. Osburn
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709 Dept. of Electrical and Computer Engineering North Carolina State University, Raleigh, North Carolina 27695–7911
Get access

Abstract

Recently, an enhanced leakage associated with ion implantation at polysilicon gate edges has been reported (1). In this study, TEM and SIMS characterization have been done to supplement electrical measurements in order to better understand the degradation. SIMS, XTEM, and TRIM analyses of arsenic implants through 7 nm gate oxides show considerable ion mixing. A roughening of the underlying silicon substrate leads to asperities which are believed to play an important role in enhancing leakage (2). XTEM analysis of a polysilicon gate edge also reveals the effects of volume expansion associated with the incorporation of both dopant and knock-on oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 733
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Stinson, M.G., and Osburn, C.M., submitted for publication.Google Scholar
2 DiMaria, D.J., and Dong, D.W., J. Appl. Phys., Vol. 51, No. 5, p. 2722, (1980).Google Scholar
3 Osbum, C.M., Cramer, A., Schwieghart, A.M., and Wordeman, M.R., Electrochemical Society Proc., Vol. 82–7, p. 354, Detroit (1982).Google Scholar
4 DiMaria, D.J., In: "The Physics of MOS Insulators". Proc. Int. Top. Conf., Lucovsky, G., Pantelides, S.T., and Galeener, F. (Ed.), Pergamon, Elmsford, N.Y., p. 1–18, (1980).Google Scholar
5 Ziegler, J.F., Biersack, J.P., and Littmark, U., "The Stopping and Range of Ions In Solids". Pergammon Press, (1987).Google Scholar
6 Sze, S.M., "VLSI Technology" McGraw-Hill, p. 231, (1983).Google Scholar
7 Flutie, R., Mat. Res. Symp. Proc. Vol., 62, p. 105, (1986).Google Scholar
8 Moline, R.A., Reutlinger, G.W. and North, J.C., In: "Atomic Collisions in Solids". Vol 1, Eds., Datz, S., Appleton, B.R., and Moak, C.D., (Plenum, New York), p. 59, (1975).Google Scholar
9 Chu, W.K., Muller, H., and Mayer, J.W., and Sigmon, T.W., Appl. Phys. Lett., Vol. 25, No. 5, p. 297, (1974).Google Scholar
10 Nicolet, M.A., and Pkraux, S.T., "Ion Mixing and Surface Layer Alloying" Noyes Publication, 1984.Google Scholar
11 Paine, B.M., and Averback, R.S., "Ion Beam Mixing: Basic Experiments", Nucl. Inst and Methods in Physics Research, B7/8 (1985), p. 666–675, North-Holland, Amsterdam.Google Scholar