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Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

Published online by Cambridge University Press:  15 February 2011

S. P. Wong ,
L. C. Ho ,
Djhu Cihen ,
W. S. Guo ,
H. Yan  and
R. W. M. Kwok
S. P. Wong
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
L. C. Ho
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
Djhu Cihen
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
W. S. Guo
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
H. Yan
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
R. W. M. Kwok
Affiliation:
Depart of Chemistry & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
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Abstract

Ion beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to ß-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 167
Copyright
Copyright © Materials Research Society 1997

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References

1. Reeson, K.J., Stoemenos, J. and Hemment, P.L.F., Thin Solid Films 191, 147 (1990).Google Scholar
2. Martin, P., Daudin, B., Dupuy, M., Ermolieff, A., Olivier, M., Papon, A.M., and Rolland, G., J. Appl. Phys. 67, 2908 (1990).Google Scholar
3. Chayahara, A., Kiuchi, M., Kinomura, A. and Mokuno, Y., Jpn. J. Appl. Phys. 32, L1286 (1993).Google Scholar
4. Nejim, A., Hemment, P.L.F., Stoemenos, J., Appl. Phys. Lett. 66, 2646 (1995).Google Scholar
5. Lindner, J.K.N., Frohnwieser, A., Rauschenbach, B., and Strizker, B., Mat. Res. Soc. Symp. Proc. Vol.354, 171 (1995).Google Scholar
6. Lindner, J.K.N., Gotz, B., Frohnwieser, A., and Stritzker, B., Mat. Res. Soc. Symp. Proc. Vol. 396, 877 (1996).Google Scholar
7. Yan, H., Kwok, R.W.M., Wong, S.P., Appl. Surf. Sci. 92, 61 (1996).Google Scholar
8. Yan, H., Kwok, R.W.M., Wong, S.P., Diamond and Related Materials 5, 556 (1996).Google Scholar
9. Brown, I.G., Gavin, J.E., MacGill, R.A., Appl. Phys. Lett. 47, 358 (1985).Google Scholar
10. Chen, Dihu, Wong, S.P., Cheung, W.Y., Kwok, R.W.M., Yongping Guo, to be published.Google Scholar
11. Spitzer, W.G., Klelnman, D.A., Frosch, C.J., Phys. Rev. 113, 133 (1957).Google Scholar
12. Borders, J.A., Picraux, S.T., Beezhold, W., Appl. Phys. Lett. 18, 509 (1971).Google Scholar
13. Yan, H., Wong, S.P., Ho, L.C., Kwok, R.W.M., to be published.Google Scholar
14. Skorupa, W., Kogler, R., Voelskow, M., Schmalz, K., Morgenstern, G., Gaworzewski, P., Nucl. Instr. and Meth. B68, 408 (1992).Google Scholar
15. Lombardo, S., Cacciato, A., Larsen, K. Kyllesbech, Raineri, V., Via, F. La, Privitera, V., S.U. Campisano, J. Appl. Phys. 79, 3464 (1996).Google Scholar
16. Ho, L.C., M.Phil. Thesis, The Chinese University of Hong Kong (1996).Google Scholar
17. van Cleef, M.W.M., Philippens, M.W.H., Rubinelli, F.A., Kolter, M.A., Schropp, R.E.I., Mat. Res. Soc. Symp. Proc. (1996)Google Scholar
18. Ho, L.C. and Wong, S.P., to be published.Google Scholar