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Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

Published online by Cambridge University Press:  03 September 2012

S. P. Wong ,
L. C. Ho ,
Dihu Chen ,
W. S. Guo ,
H. Yan  and
R. W. M. Kwok
S. P. Wong
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
L. C. Ho
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
Dihu Chen
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
W. S. Guo
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
H. Yan
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
R. W. M. Kwok
Affiliation:
Depart of Chemistry & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
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Abstract

Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to β-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

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