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Ion Beam Sputter Deposition of Refractory Metal Oxides

Published online by Cambridge University Press:  21 February 2011

B.E. Kempf ,
H.W. Dinges  and
A. PÖcker
B.E. Kempf
Affiliation:
Deutsche Bundespost Telekom Forschungs- und Technologiezentrum, D-64276 Darmstadt, Germany
H.W. Dinges
Affiliation:
Deutsche Bundespost Telekom Forschungs- und Technologiezentrum, D-64276 Darmstadt, Germany
A. PÖcker
Affiliation:
Deutsche Bundespost Telekom Forschungs- und Technologiezentrum, D-64276 Darmstadt, Germany
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Abstract

Oxides of hafnium, niobium, tantalum, and zirconium are deposited by ion beam sputtering of the pure metal targets using CO2 as working gas. The resulting thin films are amorphous, featureless smooth and of excellent adherence to semiconductor substrates. Despite a certain content of carbon they are highly transparent in the visible and near infrared wavelength range as determined by spectroscopic ellipsometry. Their wide range of refractive indices makes them suitable for multilayer optical filter design.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 529
Copyright
Copyright © Materials Research Society 1995

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References

1 Narasimha Rao, K., Mohan, S., Hegde, M.S. and Balasubramian, T.V., J. Vac. Sei. Technol. All, 394(1993)Google Scholar
2 Rausch, N. and Burte, E.P., J. Electrochem. Soc. 140, 145(1993)Google Scholar
3 Meng, Li-jian, Andritschky, M. and dos Santos, M.P., Thin Solid Films 223, 242(1993)Google Scholar
4 Demiiyont, H. and Sites, J.R., J. Vac. Sei. Technol. A2,1457(1984)Google Scholar
5 Hechtl, E., Bohdansky, J. and Roth, J., J. Nucl. Mater. 103/104 , 333(1981)Google Scholar
6 Thornton, J.A., J. Vac. Sei. Technol. 11, 666(1974)Google Scholar
7 Kempf, B., Dinges, H.W. and Burkhard, H., Extended abstracts of the Conference on Solid State Devices and Materials, Yokohama, Japan, 815(1994)Google Scholar
8 Kempf, B., Proceedings of the MRS Fall Meeting, Boston 316, 917(1993)Google Scholar
9 Martin, P.J. and Netterfield, R.P. in: Handbook of Ion Beam Processing Technology (Noges Publications, Park Ridge), New Jersey, Chap. 19(1989)Google Scholar
10 Ettenberg, M., Appl. Phys. Lett. 32, 724(1978)Google Scholar