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Ion Beam Slicing of Single Crystal Oxide Thin Films

Published online by Cambridge University Press:  17 March 2011

S. Thevuthasan ,
V. Shutthanandan ,
W. Jiang  and
W. J. Weber
S. Thevuthasan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352, [email protected]
V. Shutthanandan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
W. Jiang
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
W. J. Weber
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
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Abstract

Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0×1016 H+/cm2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.2
Copyright
Copyright © Materials Research Society 2001

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