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Ion Beam Self Annealing in Thin Silicon Films
Published online by Cambridge University Press: 25 February 2011
Abstract
Residual lattice disorder in lμm-thick silicon films as a function of the dose rate of 120 keV Ar+ ion implantations has been investigated. At a fluence of l×1 014 ions/cm2, low dose rates produced a highly damaged surface layer as expected; however, at a dose rate sufficient to locally heat the implanted film to a temperature of approximately 700°K, essentially complete annealing of the lattice disorder was observed. This temperature is significantly less than that normally required for post-implant thermal annealing. Measurements of lattice disorder were based on medium energy Rutherford backscattering and channeling analyses.
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- Copyright © Materials Research Society 1989
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