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Ion Beam Processing for Silicon - Based Light Emission

Published online by Cambridge University Press:  01 February 2011

W. Skorupa ,
T. Dekorsy ,
T. Gebel ,
M. Helm ,
V.S. Lysenko ,
A.N. Nazarov ,
I.N. Osiyuk ,
L. Rebohle ,
B. Schmidt  and
J. M. Sun
W. Skorupa*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
T. Dekorsy*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
T. Gebel*
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
M. Helm*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
V.S. Lysenko*
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
A.N. Nazarov*
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
I.N. Osiyuk*
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
L. Rebohle*
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
B. Schmidt*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
J. M. Sun*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
*
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
[email protected]
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Abstract

The development of novel devices for optical communication and integrated sensor applications is mainly focused on their possible integration into dedicated integrated circuits. The main problem concerning integrated optical systems in silicon technology has always been the realization of a highly efficient silicon-based light emitter which is a key requirement to make a real step into the world of integrated optoelectronics.

One of the most promising approaches to form such a silicon based light emitter is ion beam processing. In this paper we will report on recent results regarding blue-violet (∼400 nm) and infrared (∼1100 nm) electroluminescence (EL) from ion beam synthesized Ge-rich silicon dioxide layer and Boron-implanted pn-junctions in silicon showing remarkable power efficiencies of 0.5 and 0.12%, respectively. The main effort is devoted to the achievement of a deeper insight into the mechanism of the EL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R11.1
Copyright
Copyright © Materials Research Society 2004

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References

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