Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T04:37:15.819Z Has data issue: false hasContentIssue false

Ion beam modification of polyimides with linear ion source

Published online by Cambridge University Press:  26 February 2011

Tetsuro Yamaguchi
Affiliation:
[email protected], Kyoto Unicersity, Mechanical Engineering and Science, Yoshidahonmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan, +81-75-753-5259, +81-75-753-5259
Shih Hsiu Hsiao
Affiliation:
[email protected], Kyoto University, Mechanical Engineering and Science, Japan
Yoshikazu Tanaka
Affiliation:
[email protected], Kyoto University, Mechanical Engineering and Science, Japan
Ari Ide Ektessabi
Affiliation:
[email protected], Kyoto University, International Innnovation Center, Japan
Get access

Abstract

Polyimide films are widely used in various industrial fields. Some typical products are flexible printed circuits (FPCs), flexible displays, and electronic papers. Good adhesion between metal thin films and polyimide films is required for their long lifetime. Ion beam irradiation to the polyimide films modifies the chemical compositions, the chemical states, and the surface nanomorphology. These modifications are potential techniques to improve the adhesion. In this study, the authors employed a linear ion source, which is able to irradiate ion beam on large surfaces homogeneously. The linear ion source is desirable for industrial usage because of its high productivity. The aim of this work was to investigate the effect of modification using the linear ion source. The chemical states of the interface were characterized using x-ray photoelectron spectroscopy (XPS). The surface nanomorphology was investigated by atomic force microscopy (AFM). The performance of the modification system will be discussed, and the characteristics of the modified polyimide will be investigated in detail.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Sazanov, Yu. N., Russ. J. App. Chem., vol. 74, 8, 1217 (2001) Google Scholar
2 Hoontrakul, Pat et al. , IEEE Transaction on device and material reliability 3, No. 4, 159166 (2003)Google Scholar
3 Ebe, A., Takahashi, E., Kuratami, N. et al. , Nucl. Instr. and Meth. in Phys. Res. B121, 207211(1997)Google Scholar
4 Kondoh, E., Thin Solid Films 359, 255260 (2000)Google Scholar
5 Ge, J., Kiviahti, J. K., J. Appl. Phys. 92, No. 6, 30073015 (2002)Google Scholar
6 Ide-Ektessabi, Ari, Watanabe, Y., Rev. Sci. Instrum. 73, 2, 849851 (2002)Google Scholar
7 Ide-Ektessabi, Ari, Yasui, N., Okuyama, D., Rev. Sci. Instrum. 73, 2, 873876 (2002)Google Scholar
8 Ektessabi, A. M., Hakamata, S., Thin Solid Films 377–378, 621625 (2000)Google Scholar
9 Silverman, B. D., Bartha, J. W., Clabes, J. G., Ho, P. S., J. Poly. Sci. Part A 24, 33253333 (1986)Google Scholar
10 Inagaki, N., Tasaki, S., Masumoto, M., Macromolecules 29, 16421648 (1996)Google Scholar
11 Jordan, J. L., Kovac, C. A., Morar, J. F., and Pollak, R. A., Phys. Rev. B 36, No.3, 13691377, (1987)Google Scholar
12 Flitsch, R. and Shin, D.Y, J. Vac. Sci. Technol. A 8, 23762381 (1990)Google Scholar
13 Kim, S., Lee, K. J., Seo, Y., Langmuir 20, 157163 (2004)Google Scholar
14 Chang, G. S., Jung, S. M., and Lee, Y. S. et al. , J. Appl. Phys. 81, No. 1, 135138 (1997)Google Scholar