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Ion Beam Effects on the Formation of Semiconductor Nanoclusters

Published online by Cambridge University Press:  10 February 2011

S. Schiestel ,
C. A. Carosella ,
R. Stroud ,
S. Guha ,
C. M. Cotell  and
K. S. Grabowski
S. Schiestel
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
C. A. Carosella
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
R. Stroud
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
S. Guha
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
C. M. Cotell
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
K. S. Grabowski
Affiliation:
US Naval Research Laboratory, 4555 Overlook Ave., Washington, D.C. 20375
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Abstract

Silicon rich silica films were deposited by coevaporation of silica and silicon with and without simultaneous ion bombardment. The Si-silica ratios are correlated to changes of index of refraction and shifts in an asymmetric stretching mode IR absorption. Photoluminescence between 550 and 600 nm is observed for all films which is attributed to SiO2 defects. After annealing this photoluminescence peak shows a shift to 750 nm and an increase in intensity, indicating the formation of silicon nanoclusters. This effect is more pronounced for samples prepared without ion beam treatment. ERD measurements show a correlation of photoluminescence with the presence of hydrogen in the films. The microstructure of these films were investigated by TEM. Photoluminescence from the Si nanoclusters in the films is optimized when the arrival rate of Si/silica is slightly less than 0.4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 405
Copyright
Copyright © Materials Research Society 1998

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References

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