Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:31:02.279Z Has data issue: false hasContentIssue false

Ion Beam Crystallography of Metal-Silicon Interfaces: Pd-Si(111)

Published online by Cambridge University Press:  15 February 2011

R. Tromp
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam(The Netherlands)
E. J. Van Loenen
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam(The Netherlands)
M. Iwami
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam(The Netherlands)
R. Smeenk
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam(The Netherlands)
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam(The Netherlands)
Get access

Extract

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium siuicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd2Si layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Tromp, R., van Loenen, E. J., Smeenk, R., Iwami, M., Saris, F. W., Nava, F. and Ottaviani, G., submitted to Surf. Sci.Google Scholar
2 Smeenk, R., Tromp, R., Boerboom, H. and Saris, F. W., Nucl. Instrum. Methods, 195 (1982) 581.Google Scholar
3 Hiraki, A., J. Electrochem. Soc., 127 (12) (1980) 2662.CrossRefGoogle Scholar
3a Okuno, K., Ito, T., Iwami, M. and Hiraki, A., Solid State Commun., 34 (1980) 493.Google Scholar