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Ion and Electron Spectroscopy During Pulsed Laser Irradiation of Silicon

Published online by Cambridge University Press:  15 February 2011

J.P. Long ,
R.T. Williams ,
T.R. Royt ,
J.C. Rife  and
M.N. Kabler
J.P. Long
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
R.T. Williams
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
T.R. Royt
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J.C. Rife
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
M.N. Kabler
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

Ion mass spectrometry, charged particle yields, and kinetic energy distributions of electrons and ions are used to characterize silicon wafers and vacuum-cleaved silicon surfaces under conditions related to laser annealing. We find that alkali metals dominate the positive ion emission from chemically-cleaned wafers, a mass-72 peak tentatively identified as Si2O+ comprises the main ion emission from the cleaved surface, and ion and electron temperatures can be derived from the energy distribution curves although the Si2O+ emission implies more than a simple thermal evaporation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 89
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Sachs Freeman and Assoc., Bowie, MD 20715

References

REFERENCES

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