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Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

Published online by Cambridge University Press:  03 September 2012

Yuanzhong Zhou ,
Shu Qin  and
Chung Chan
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Shu Qin
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Chung Chan
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
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Abstract

A plasma immersion ion implantation (PIII) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 357
Copyright
Copyright © Materials Research Society 1997

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