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Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

David J. Larkin ,
Leonard V. Interrante ,
John B. Hudson  and
Bin Han
David J. Larkin
Affiliation:
Departments of Chemistry and Rensselaer Polytechnic Institute, Troy, New York 12180
Leonard V. Interrante
Affiliation:
Departments of Chemistry and Rensselaer Polytechnic Institute, Troy, New York 12180
John B. Hudson
Affiliation:
Materials Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
Bin Han
Affiliation:
Materials Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The low pressure chemical vapor deposition (LPCVD) of silicon carbide from (CH3)HSiCH2SiCH2 (CH3)CH2 SiH2 (CH 3) on Si(100) has been investigated between 700 and 1100°C at ca. 1.0 torr total pressure using a flow of argon as a carrier gas in a cold-wall LPCVD system. The gaseous byproducts were determined using quadrupole mass spectrometry (QMS) and gas chromatography - Fourier transform IR (FTIR) spectroscopy. The coating surface morphology varied from smooth to a columnar structure with increasing substrate temperature. Film composition and crystallinity were monitored as a function of deposition temperature using Auger electron spectroscopy (AES) and powder XRD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 141
Copyright
Copyright © Materials Research Society 1991

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References

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