Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:35:19.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Potential Diffusion Barriers Between YBa2Cu3O7-x and Silicon

Published online by Cambridge University Press:  28 February 2011

A. Lubig ,
Ch. Buchal ,
W. Zander  and
B. Stritzker
A. Lubig
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
W. Zander
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
B. Stritzker
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich, P. O. Box 1913, D–5170 Jülich, Fed. Rep. of Germany
Get access

Abstract

Thin films of ZrO2, BaF2, and noble metals on TiN have been examined by RBS as potential diffusion barriers between Si(100) substrates and high-temperature superconductors. As best result so far, a buffer layer of 260 nm ZrO2 enabled the growth of a 230 nm film of YBa2Cu3O7-x, which had been deposited by laser ablation. The relatively low zero resistance temperature of about 60 K may result from some interdiffusion between YBaCuO components and the ZrO2 layer or from holes in the film. A 520 nm BaF2 layer was able to prevent Si outdiffusion towards the surface, when exposed to an oxidizing ambient at typical YBa2Cu3O7-x deposition temperatures between 750 and 800°C. A strong reaction between YBaCuO components and BaF2, however, resulted in non-superconducting films. At high temperatures in oxidizing ambient the noble metal/TiN/Si samples suffered severely from oxidation and surface roughening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1149
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mogro-Campero, A., Hunt, B. D., Turner, L. G., Burrel, M. C., Balz, W. E., Appl. Phys. Lett. 52, 584 (1988)Google Scholar
2 Lubig, A., Buchal, Ch., Fröhlingsdorf, J., Zander, W., Stritzker, B., Nucl. Inst. Meth. Phys. Res. B, in pressGoogle Scholar
3 Mogro-Campero, A., Turner, L. G., Appl. Phys. Lett. 52., 1185 (1988)Google Scholar
4 Venkatesan, T., Chase, E. W., Wu, X. D., Inam, A., Chang, C. C., Shokoohi, F. K., Appl. Phys. Lett. 53, 243 (1988)Google Scholar
5 Myoren, H., Nishiyama, Y., Miyamoto, N., Fukumoto, H., Nasu, H., Osaka, Y., 2nd Workshop on High-Temperature Superconducting Electron Devices, June 7–9, 1989, Shikabe, Japan, 209 Google Scholar
6 Fröhlingsdorf, J., Zander, W., Stritzker, B., Solid State Commun. 11, 965 (1988)Google Scholar
7 Chan, Siu-Wai, Chase, E. W., Wilkens, B. J., Hart, D. L., Appl. Phys. Lett. 54, 2032 (1989)Google Scholar