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Published online by Cambridge University Press: 31 January 2011
The film of MgO-AlN system was manufactured by the conventional magnetron sputtering process. It is observed that a Fermi level could be raised by letting AlN composition increase, confirmed by ultraviolet (UV) photon energy dependence of the electronic emission, and investigated with XPS that the surface reaction, such as surface hydroxide / carbonate of MgO, could be controlled in addition of AlN. The glow discharge characteristics for MgAlON films were evaluated from the minimum pressure that a glow discharge is started under constant RF power, which correspond to the result of the analysis for the secondary electron emission coefficient, using Metastable De-excitation Spectroscopy (MDS).