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Investigation of Growth Evolution in c-Axis SrBi2Nb2O9 Epitaxial Thin Films

Published online by Cambridge University Press:  10 February 2011

J. Lettieri
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
M. A. Zurbuchen
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
G. W. Brown
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
Y. Jia
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
W. Tian
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109–2136
X. Q. Pan
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109–2136
M. E. Hawley
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
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Abstract

(001)-oriented epitaxial SrBi2Nb2O9 thin films have been grown by pulsed laser deposition on (001) SrTiO3 and (001) LaAlO3—Sr2AlTaO6 substrates at optimized growth conditions. 4-circle x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy reveal highly oriented epitaxial films. Atomic force microscopy indicates spiral growth for films grown on SrTiO3 and layer-by-layer growth for films grown on LaAlO3—Sr2AlTaO6.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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