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Investigation of Amorphous IGZO TFT Employing Ti/Cu Source/Drain and SiNx Passivation

Published online by Cambridge University Press:  12 July 2011

Young Wook Lee ,
Sung-Hwan Choi ,
Jeong-Soo Lee ,
Jang-Yeon Kwon  and
Min-Koo Han
Young Wook Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Sung-Hwan Choi
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Jeong-Soo Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Jang-Yeon Kwon
Affiliation:
Department of Material Science and Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
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Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Keywords

oxidesemiconductingTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a19-06
Copyright
Copyright © Materials Research Society 2011

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