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Introduction Of Ions Into Wide Band Gap Semiconductors

Published online by Cambridge University Press:  10 February 2011

H. Paul Maruska ,
Mike Lioubtchenko ,
Thomas G. Tetreault ,
Marek Osinskif ,
Stephen J. Pearton ,
Matthew Schurmant ,
Robert Vaudo ,
Shiro Sakap ,
Qisheng Chen  and
Randy J. Shult
H. Paul Maruska
Affiliation:
Implant Sciences Corporation, 107 Audubon Road, Wakefield, MA 01880
Mike Lioubtchenko
Affiliation:
Implant Sciences Corporation, 107 Audubon Road, Wakefield, MA 01880
Thomas G. Tetreault
Affiliation:
Implant Sciences Corporation, 107 Audubon Road, Wakefield, MA 01880
Marek Osinskif
Affiliation:
Department of Electrical Engineering, University of New Mexico, Albuquerque, NM 87131
Stephen J. Pearton
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611
Matthew Schurmant
Affiliation:
EMCORE Corp., 394 Elizabeth Ave., Somerset, NJ 08873
Robert Vaudo
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
Shiro Sakap
Affiliation:
Electrical Engineering Department, Tokushima University, Tokushima, 770 Japan
Qisheng Chen
Affiliation:
APA Optics, 2950 NE 84th Lane, Blaine, MN 55449
Randy J. Shult
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation into SiC and the III-V nitrides is reviewed, new device concepts are given, and recent results are presented. These include SiC implantations at elevated temperatures, a GaN sample implanted with Si having an electron mobility after annealing of 106 cm2/V-s, and a novel GaN np junction diode created by implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 333
Copyright
Copyright © Materials Research Society 1998

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