Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T09:04:49.811Z Has data issue: false hasContentIssue false
  • English
  • Français

Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate

Published online by Cambridge University Press:  11 February 2011

Qiaoying Zhou ,
M. O. Manasreh ,
B. D. Weaver  and
M. Missous
Qiaoying Zhou
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131–1356.
M. O. Manasreh
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131–1356.
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave., SW, Washington, DC 20375.
M. Missous
Affiliation:
Department of Electrical Engineering and Electronics, UMIST, P. O. BOX 88, Manchester M60 1QD, England, UK.
Get access

Abstract

Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.37
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Levine, B. F., J. Appl. Phys. 74, R1 (1993)Google Scholar
[2] Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors, edited by Manasreh, M. O. (Artech House, Boston, 1993).Google Scholar
[3] Optoelectronic Properties of Semiconductors and Superlattices, edited by Manasreh, M. O.(Gordon and Breach, Amsterdam, 1996), Vol. 1.Google Scholar
[4] Auret, F. D., in Defects in Optoelectronic Materials, edited by Wada, K. and Pang, S. W., Vol. 11 of the book series Optoelectronic Properties of Semiconductors and Superlattices (Gordon and Breach, Amsterdam, 2000), Chap. 7, pp. 255–343.Google Scholar
[5] Auret, F. D. and Goodman, S. A., in III-V Nitride Semiconductors: Defects and Structural Properties, edited by Manasreh, M. O. (Elsevier, Amsterdam, 2000), Chap. 8, pp. 251–286.Google Scholar
[6] Manasreh, M. O., Chavez, J. R., Kemp, W. T., Hoenshel, K., and Missous, M., Mater. Res. Soc. Symp. Proc. 484, 637 (1998).Google Scholar
[7] Tan, H. H. and Jagadish, C., Appl. Phys. Lett. 71, 2680 (1997).Google Scholar
[8] Manasreh, M. O., Ballet, P., Smathers, J. B., Salamo, G. J., and Jagadish, Chennupati, Appl. Phys. Lett. 75, 525 (1999).Google Scholar
[9] Berhane, Y., Manasreh, M. O., and Weaver, B. D., Journal of Appl. Phys. 89, 3517 (2001)Google Scholar
[10] Manasreh, M. O., Von Bardeleben, H. J., Mousalitin, A. M. and Khokhlov, D. R., Journal of Appl. Phys. 85, 630 (1999)Google Scholar
[11] Weaver, B. D. and Jackson, E. M., Appl. Phys. Lett. 80, 2791 (2002).Google Scholar
[12] Manasreh, M. O., Ballet, P., Smaters, J. B., Salamo, G. J., and Jagadish, C., Appl. Phys. Lett. 75, 525 (1999).Google Scholar