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Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

F. Szmulowicz ,
M. O. Manasreh ,
C. Kutsche  and
C. E. Stutz
F. Szmulowicz
Affiliation:
Materials Directorate (WL/MLPO), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
M. O. Manasreh
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
C. Kutsche
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
C. E. Stutz
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
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Abstract

Intersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 53
Copyright
Copyright © Materials Research Society 1994

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