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Interstitial Trapped Hydrogen Molecules in Pecvdamorphous Silicon

Published online by Cambridge University Press:  15 February 2011

R. Borzi ,
F. Mascarenhas ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg ,
P. Wickboldt  and
W. Paul
R. Borzi
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
F. Mascarenhas
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
P. A. Fedders
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
D. J. Leopold
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
R. E. Norberg
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
P. Wickboldt
Affiliation:
Harvard University, Division of Applied Science, Cambridge, MA 02138
W. Paul
Affiliation:
Harvard University, Division of Applied Science, Cambridge, MA 02138
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Abstract

New NMR measurements show that interstitial T site-trapped molecular hydrogen can amount to more than one third of the contained hydrogen in high quality PECVD amorphous silicon. Microvoid-contained dense molecular hydrogen is negligible in these good films. Experiments on a sequence of hydrogenated and/or deuterated a-Si films have characterized individually-trapped molecular HD and D2 in films deposited from SiD4, and from SiH4+D2. The T site-trapped molecular hydrogen fraction observed here is larger than previously reported because of recent efforts to measure very slowly relaxing molecular components and the employment of radiofrequency pulse sequences to detect ortho-D2 with nuclear spin I=2. The population of interstitially trapped molecular hydrogen increases with increasing photovoltaic quality over a range of an order of magnitude in photoresponse product ημτ. Above 200 K, hopping transport of molecular hydrogen among the amorphous equivalent of interstitial T sites occurs with an activation energy near 50 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 287
Copyright
Copyright © Materials Research Society 1999

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References

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