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Interrelation between Light Emitting and Structural Properties of Si Nanoclusters Embedded in SiO2 and Al2O3 Hosts

Published online by Cambridge University Press:  19 November 2013

L. Khomenkova ,
O. Kolomys ,
V. Strelchuk ,
A. Kuchuk ,
V. Kladko ,
M. Baran ,
J. Jedrzejewski ,
I. Balberg ,
P. Marie  and
F. Gourbilleau
...Show all authors
L. Khomenkova
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
O. Kolomys
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
V. Strelchuk
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
A. Kuchuk
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
V. Kladko
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
M. Baran
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
J. Jedrzejewski
Affiliation:
Racah Institute of Physics, Hebrew University, 91904 Jerusalem, Israel
I. Balberg
Affiliation:
Racah Institute of Physics, Hebrew University, 91904 Jerusalem, Israel
P. Marie
Affiliation:
CIMAP/ENSICAEN, 6 Blvd. Maréchal Juin, 14050 Caen cedex 4, France
F. Gourbilleau
Affiliation:
CIMAP/ENSICAEN, 6 Blvd. Maréchal Juin, 14050 Caen cedex 4, France
N. Korsunska
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, Kyiv 03028, Ukraine
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Abstract

The present work deals with the comparative investigation of Si-ncs embedded in SiO2 and Al2O3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Six(SiO2)1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Six(Al2O3)1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Six(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3)1-x films the recombination via defects prevails due to higher amount of interface defects in the Six(Al2O3)1-x caused by stresses.

Keywords

luminescenceSi nanocrystalsAl2O3 films
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 75 - 80
Copyright
Copyright © Materials Research Society 2013 

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