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Interplay Between Strain and Effective Electron Mass on the Absorption Strength of Dilute Nitride Semiconductor Quantum Wires

Published online by Cambridge University Press:  01 February 2011

Andrea Feltrin ,
Andenet Alemu  and
Alexandre Freundlich
Andrea Feltrin
Affiliation:
[email protected], University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States, 713-743-8731
Andenet Alemu
Affiliation:
[email protected], University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States
Alexandre Freundlich
Affiliation:
[email protected], University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States
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Abstract

We have investigated the absorption spectrum and strength of InyGa1−yAs1−xNx quantum wires. We show that compounds with varying fractions of indium and nitrogen, but similar band gaps have different absorption patterns. This behavior is related to the interplay between different effects as strain, which mainly affects the band offsets, and the increased electron mass in dilute nitride III-V semiconductors. We also study how the influence of these parameters changes with the optical band gaps associated to common optical telecommunication wavelengths. Our model calculations are performed in the parabolic band approximation and include excitonic effects.

Keywords

nanostructureoptical propertiesabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 940: Symposium P – Semiconductor Nanowires – Fabrication, Physical Properties, and Applications , 2006 , 0940-P08-20
Copyright
Copyright © Materials Research Society 2006

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