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Internal Electric Field Profile of A-Si:H And A-Sige:H Solar Cells

Published online by Cambridge University Press:  10 February 2011

Xinhua Geng ,
Lei Wu ,
Kent Price ,
Xunming Deng ,
Qi Wang  and
Daxing Han
Xinhua Geng
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Lei Wu
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Kent Price
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Xunming Deng
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Rd. Troy, Michigan 48084, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA.
Daxing Han
Affiliation:
Dept of Phys & Astronomy, Univ of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
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Abstract

By using the transient-null-current method, we have measured the internal electric field profiles Ei(x) near the p/i interface for two groups of solar cells: (a) a-Si:H p-i-n solar cells with varied i-layer thicknesses, and (b) a-SiGe:H cells with varied Ge content. When using an exponential function of Ei(x) to fit the experimental results, we obtained the field strength at the p/i interface E0, the screening length Lo, and the density of defect states Nd in the i-layer. The thinner the i-layer, the stronger the field strength obtained. For i-layer thickness increasing from 0.1 to 0.5 μm, the field strength E0 decreases from 1.15×105 to 2.0×104 V/cm; Lo decreases from 0.89 to 0.14 μm; and Nd is 3-4×1016 (cm3eV)−1. For the a-SiGe:H cells, as the Ge content increases from 40 to 55 %, E0 increases from 9.3×104 to 1.2×105 V/cm. The correlation of the internal electric field parameters with the cell‘s performance is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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References

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