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Interlayer Spacing of Sputter Deposited Vanadium Pentoxide

Published online by Cambridge University Press:  26 February 2011

Carolyn Rubin Aita ,
Chee-Kin Kwok  and
Mei Lee Kao
Carolyn Rubin Aita
Affiliation:
Materials Department and the Laboratory for Surface Studies University of Wisconsin - Milwaukee P.O. Box 784 Milwaukee, Wisconsin 53201
Chee-Kin Kwok
Affiliation:
Materials Department and the Laboratory for Surface Studies University of Wisconsin - Milwaukee P.O. Box 784 Milwaukee, Wisconsin 53201
Mei Lee Kao
Affiliation:
Materials Department and the Laboratory for Surface Studies University of Wisconsin - Milwaukee P.O. Box 784 Milwaukee, Wisconsin 53201
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Abstract

Vanadium pentoxide films were grown by sputtering a V target in O2-bearing atmospheres containing 0 to 98% Ar. The interlayer spacing was siudied as a function of sputtering gas 02 content. The results are discussed in terms of defects in thevanadyl 0 layir and correlated with target surface oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 435
Copyright
Copyright © Materials Research Society 1987

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References

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