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Interference Effect between Electron and Ion Flows in Semiconducting Fe3−δO4

Published online by Cambridge University Press:  18 March 2011

Jeong-Oh Hong  and
Han-Ill Yoo
Jeong-Oh Hong
Affiliation:
Solid State Ionics Research Lab., School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Han-Ill Yoo
Affiliation:
Solid State Ionics Research Lab., School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

The effective valence, zFe–αFe*, of mobile Fe-ions (Fe2+, Fe3+) in semiconducting Fe3O4 was determined at elevated temperatures via the electrotransport experiment in association with the literature data on the cation diffusivity and total electrical conductivity. It has been found that the value for zFe–αFe* varies systematically from below 2 up to 3 with oxygen partial pressure at a fixed temperature. The effective valence is determined not only by the mobility difference of Fe2+ and Fe3+ ions (zFe), but also by the cross effect between the cations and electrons upon their transfer (αFe*). A value of zFe–αFe* between 2 and 3 may be attributed to the mobility difference between Fe2+ and Fe3+ ions even in the absence of the cross effect, but the values of zFe–αFe* < 2 clearly indicate that the cross effect is in play in Fe3O4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 658: Symposium GG – Solid-State Chemistry of Inorganic Materials III , 2000 , GG3.25
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Yoo, H.-I., Schmalzried, H., Martin, M. and Janek, J., Z. Phys. Chem. N.F. 168, 129 (1990).Google Scholar
2. Yoo, H.-I. and Martin, M., Ceram. Trans. 24, 103 (1991).Google Scholar
3. Yoo, H.-I., Lee, J.-H., Martin, M., Janek, J. and Schmalzried, H., Solid State Ionics 67, 317 (1994).Google Scholar
4. Yoo, H.-I. and Lee, J.-H., J. Phys. Chem. Solids 57, 65 (1996).Google Scholar
5. Yoo, H.-I. and Lee, K.-C., Z. Phys. Chem. N.F. 207, 127 (1998).Google Scholar
6. Morin, F., Solid State Ionics 12, 407 (1984).Google Scholar
7. Wagner, C., Prog. Solid-State Chem. 10, 3 (1975).Google Scholar
8. Lee, J.-H., Martin, M., and Yoo, H.-I., Electrochemistry 60, 482 (2000).Google Scholar
9. Dieckmann, R. and Schmalzried, H., Ber. Bunsenges. Phys. Chem. 81, 344 (1977).Google Scholar
10. Dieckmann, R., Ber. Bunsenges. Phys. Chem. 86, 112 (1982).Google Scholar
11. Dieckmann, R., Witt, C. A., and Mason, T. O., Ber. Bunsenges. Phys. Chem. 87, 495 (1983).Google Scholar
12. Dieckmann, R. and Schmalzried, H., Ber. Bunsenges. Phys. Chem. 90, 564 (1986).Google Scholar
13. Lee, K.-C. and Yoo, H.-I., Solid State Ionics 92, 25 (1996).Google Scholar
14. Hong, J.-O. and Yoo, H.-I., submitted to Solid State Ionics.Google Scholar
15 Dieckmann, R., J. Phys. Chem. Solids 59, 507 (1998).Google Scholar