Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:59:00.774Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Reactions of Nickel films on GaAs

Published online by Cambridge University Press:  21 February 2011

L.J. Chen  and
Y.F. Hsieh
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
Get access

Abstract

Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were performed to study the interfacial reactions of Ni/GaAs contact system as a result of isothermal annealing and two step annealing. Ni2GaAs was observed to exhibit preferred orientation relationships with respect to GaAs substrate after 300–350°C annealing. The compound decomposed to NiAs and Ga-compounds after 400°C annealing. NiAs was also found to grow preferentially on GaAs. The step annealing was found to be ineffective in varying the morphological structure of interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 165
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hollan, L., Hallais, J.P., and Brice, J.C. in: Current Topics in Material Science, Volume 5, Kaldis, E., ed. (North-Holland, Amesterdam, 1980).Google Scholar
2. Woodall, J.M. and Freeouf, J.L.. JVST 19(3), 794 (1981).Google Scholar
3. Romanova, I.D., Maksimova, N.K., Pekarskii, E.N. and Yakubenya, M.P., Translation from Izrestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, 151 (1976).Google Scholar
4. Ogawa, M., Thin Solid Films, 70, 181 (1980).Google Scholar