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Interfacial Reactions of Ag Thin Films On (001) GaAs

Published online by Cambridge University Press:  25 February 2011

J. S. Chen ,
E. Kolawa ,
R. P. Ruiz  and
M-A. Nicolet
J. S. Chen
Affiliation:
California Institute of Technology, CA 91125
E. Kolawa
Affiliation:
California Institute of Technology, CA 91125
R. P. Ruiz
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, CA 91109
M-A. Nicolet
Affiliation:
California Institute of Technology, CA 91125
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Abstract

Ag thin films of 90 nm in thickness were deposited on (001) GaAs substrates, with or without an amorphous Ta-Si-N cap layer on top. All samples were annealed at 550°C for 30 min in an Ar flow. The interaction between the Ag film and the GaAs substrate is characterized by MeV 4He backscattering spectrometry, scanning electron microscopy and cross-sectional transmission electron microscopy.

Without encapsulants, As is lost by sublimation and Ga-oxide forms on the Ag surface during the annealing process. Elongated prismatic triangular pits bounded by GaAs {111} planes develop in the substrate that are filled with Ag. Also, the native oxide between the GaAs substrate and the polycrystalline Ag layer balls up after annealing. No Ag-Ga or Ag-As compound is produced. With a Ta-Si-N cap layer, the pits are almost totally absent, but the interfacial native oxide layer still balls up.a

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 355
Copyright
Copyright © Materials Research Society 1991

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References

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