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Interfacial Morphology of Selicides Formed Via Rta of Sputtered Bi- and Multi-Layer Co/Ti(O,C) on Si

Published online by Cambridge University Press:  25 February 2011

Feng Hong ,
Bijoy K. Patnaik ,
Bingzong Li ,
Ping Liu ,
Zen Sun  and
George A. Rozgonyi
Feng Hong
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh. NC 27695–7916
Bijoy K. Patnaik
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh. NC 27695–7916 Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
Bingzong Li
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
Ping Liu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
Zen Sun
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
George A. Rozgonyi
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
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Abstract

Cobalt silicide formed by diffusion of Co through a Ti compound has been reported for both bilayer and multilayer Co/Ti-Si structurest[2-4]. To compare the bilayer and multilayer systems in terms of the Co silicide interfacial morphology, both bilayers and six layers of 20nm Co and lOnm Ti were sputter deposited on (100)Si in a system where background. oxygen and carbon were gettered by each Ti layer. The samples were annealed from 550°C to 800°C for 60 sec by lamp RTA in N2 ambient. XTEM micrographs revealed that significant differences in interfacial morphology existed between bilayer and multilayer samples. The interfacial amorphous Ti(O.C) diffusion barrier layer was found to be more effective in the multilayer system producing uniform CoSix layers as thin as ∼5nm after 550°C RTA, whereas the silicide formed in the bilaver samples under the same condition was rough. RBS analysis showed that the transformation temperature from CoSi to CoSi2 was 800°C in bilayers and even higher for multilayers. The higher transformation temperature is attributed to the additional Co available in the multilayer system and its effect on Co monosilicide phase stability as previously reported[10].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 533
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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