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Interfacial Microstructures in InxGa1-xAs/GaAs Strained Layer Structures

Published online by Cambridge University Press:  25 February 2011

J. Y. Yao ,
T. G. Andersson  and
G. L. Dunlop
J. Y. Yao
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, SWEDEN
T. G. Andersson
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, SWEDEN
G. L. Dunlop
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, SWEDEN
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Abstract

The interfacial microstructures of lattice strained InxGal-xAs/GaAs multiple layer structures, that were grown by molecular beam epitaxy (MBE) on GaAs (100) substrates, have been investigated and characterised by transmission electron microscopy (TEM). A g3ii weak beam imaging technique has been used to study structural imperfections at the heterointerfaces. The morphology of rough heterointerfaces, which resulted from the growth of the InxGal-xAs layers (strained layer) either in a two dimensional (2D) or in a three dimensional (3D) growth mode via island formation, was imaged using this technique. A transition from 2D to 3D growth was found to occur at a certain critical layer thickness which decreased with increasing indium fraction. In thicker layers, dislocation complexes, which may have been caused bythe formation of islands, were also observed. These complexes were primarily composed ofstacking faults bounded by partial dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 303
Copyright
Copyright © Materials Research Society 1989

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