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INTERFACIAL DEFECTS AND EPITAXY

Published online by Cambridge University Press:  28 February 2011

R.C. POND
R.C. POND*
Affiliation:
Department of Metallurgy and Materials Science. The University of Liverpool. P.O. Box 147, Liverpool L69 3BX.
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Abstract

It is shown that interfacial defects are characterised by combinations of symmetry operations, one from each of the adjacent crystals. This approach demonstrates that the variety of possible interfacial defects is broader than had been previously recognised, and includes disclinations and dispirations in addition to dislocations. The condition of the initial substrate surface is shown to have a very important influence on the character and stability of interfacial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 3
Copyright
Copyright © Materials Research Society 1986

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References

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