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Interfacial Atomic Structure in Heteroepitaxial β-SiC on TiC Substrates

Published online by Cambridge University Press:  15 February 2011

Fen-Ren Chien ,
S. R. Nutt ,
J. Carulli ,
N. Buchan ,
W. S. Yoo  and
P. M. Mailloux
Fen-Ren Chien
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912 U.S.A.
S. R. Nutt
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912 U.S.A.
J. Carulli
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
N. Buchan
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
W. S. Yoo
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
P. M. Mailloux
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
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Abstract

Thin epitaxial films of β-SiC were grown on (100), (111) and (112) TiC substrates and the interfaces were characterized by HREM. The (111) interface was abrupt and atomically flat, while the (112) interface was composed of {111} facets and steps. The (100) orientation did not result in epitaxial growth of SiC, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on the (100) plane, although the lattice parameters are relatively close. A model for the atomic structure of the stable (111) interface is proposed based on comparison with HREM images of the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 303
Copyright
Copyright © Materials Research Society 1993

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