Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-07T20:13:21.156Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface Study of SiO2/ HfO2/SiO2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

Published online by Cambridge University Press:  01 February 2011

Alexandre Guiraud ,
Nicolas Breil ,
Mickaël Gros-Jean ,
Damien Deleruyelle ,
Gilles Micolau ,
Christophe Muller ,
Nathalie Cherault  and
Pierre Morin
Alexandre Guiraud
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Nicolas Breil
Affiliation:
[email protected], IBM Microelectronics, Crolles, France
Mickaël Gros-Jean
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Damien Deleruyelle
Affiliation:
[email protected], IM2NP, Marseille, France
Gilles Micolau
Affiliation:
[email protected], IM2NP, Marseille, France
Christophe Muller
Affiliation:
[email protected], IM2NP, Marseille, France
Nathalie Cherault
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Pierre Morin
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Get access

Abstract

We have investigated the integration of Hf-based material as Inter Poly Dielectric in flash memories devices. Electrical measurements showed the good properties of SiO2/HfO2/SiO2 stacks. We then interested to the impact of the thermal budget on this specific stack which induces changes in the electrical properties. XPS measurements suggests those changes are due to the presence of an Hf-silicate layer at the SiO2/HfO2 interface.

Keywords

dielectric propertieselectrical propertiesmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I07-08
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wellekens, D. Houdt, J.V. and Member, S. The Future of Flash Memory : is Floating Gate Technology Doomed to Lose The Race?, 2008.Google Scholar
[2] Modreanu, M. Sancho-parramon, J., Connell, D.O. and Justice, J. Solid phase crystallisation of HfO2 thin films, Materials Science and Engineering B, vol. 118, 2005, pp. 127–131.Google Scholar
[3] He, G. Zhang, L.D. and Fang, Q. Silicate layer formation at HfO2 SiO2 Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy, Journal of Applied Physics, vol. 100, 2006, pp. 1–5.Google Scholar
[4] Shin, D. Arroyave, R. and Liu, Z. Thermodynamic modeling of the Hf Si O system Computer Coupling of phase diagramm and thermochemistry, vol. 30, 2006, pp. 375–386.Google Scholar
[5] Zhang, Z. Li, M. and Campbell, S.A. Effects of Annealing on Charge in HfO 2 Gate Stacks, IEEE Electron Device Letter, vol. 26, 2005, pp. 20–22.Google Scholar
[6] Barrett, N. Renault, O. Damlencourt, J. and Martin, F. metal-oxide-semiconductor gate oxide stacks : A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy, Journal of Applied Physics, vol. 96, 2005, pp. 6362–6369.Google Scholar
[7] Besson, P. Loup, V. Salvetat, T. Rochat, N. Lhostis, S. Favier, S. Dabertrand, K. and Cosnier, V., Critical thickness threshold in HfO2 layers, Solid State Phenomena, vol. 134, pp. 67–70.Google Scholar