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Interface Study of Mo/GaAs

Published online by Cambridge University Press:  22 February 2011

Peiching Ling ,
Jyh-Kao Chang ,
Min-Shyong Lin  and
Jen-Chung Lou
Peiching Ling
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Jyh-Kao Chang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Min-Shyong Lin
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Jen-Chung Lou
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
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Abstract

The electrical characteristics and the microstructure of Mo/GaAs Schottky diodes fabricated by electron-beam evaporation have been studied. The barrier height, ideality factor, deep trapping levels and intermetallic compounds of these annealed or unannealed Mo/GaAs Schottky diodes are obtained by using the I-V, C-V, Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) analyses. An obvious interdiffusion at Mo/GaAs interface is observed in Mo/GaAs Schottky diodes annealed above 500°C for 10 min. DLTS results show that there are two electron traps [Ec-(0.52±0.02)'eV and Ec-(0.86±0.02) eV] and one hole trap [Ev+(0.92±0.02) eV] are demonstrated for 300°C, 400°C post-annealed Mo/GaAs diodes. TEM results also indicate that the disappearance of these deep trapping levels may correlated to the formation of intermetallic compounds GaMo3 and MoAs2 existed in Mo/GaAs diodes post-annealed above 500°C. It is believed that the metal-semiconductor interdiffusion and the intermetallic compounds play the major roles for the thermal degradation of Mo/GaAs Schottky diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 137
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Batev, P.M., Ivanovitch, M.D., Kafedjiiska, E.I., and Simeonov, S.S., Int. J. Electron. 45, 511 (1980).Google Scholar
2. Lin, M.S., Su, W.H., Lou, J.C., and Lei, T.F., Jpn. J. Appl. Phys. Supplement 22–1, 397 (1982).CrossRefGoogle Scholar
3. Lang, D.V., J.Appl. Phys. 45, 3023 (1974).Google Scholar
4. Munoz-Yague, A., Piqueras, J. and Fabre, , J. Electronchem, Soc., Vol.128, No. 1, 149 (1981).Google Scholar
5. Bardeen, J., Phys. Rev., 71, 717 (1947).Google Scholar
6. Lou, J.C., Lin, M.S., and Su, W.H., J. Appl. Phys. 54, 4482 (1983).Google Scholar
7. Chang, L.L., Esaki, L., and Tsu, R., Appl. Phys. Lett., 19, 143 (1971).Google Scholar
8. Johnson, E.J., Kafalas, J., Davis, R.W., and Dyes, W.A., Appl. Phys. Lett., 140, 993 (1982).Google Scholar
9. Weber, E.R., Znnen, H., Kaufmann, U., Windschief, J., Schneider, J. and Wosinski, T., J. Appl. Phys., 53, 6140 (1982).Google Scholar